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Open Circuit Voltage Photodetector
TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.
Existing photodetectors are susceptible to various noise sources, such as thermal and electronic. The noise can degrade the signal-to-noise ratio and affect the accuracy of measurements, particularly in low-light conditions. This technology is an open-circuit voltage photodetector (OCVP) that…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Fuller, Earl; Kazemi, Alireza; Khalil, Waleed; Ronningen, TJ; Smith, Dale "Shane"; Specht, Teressa; Tantawy, Ramy "Ramy"
  • Licensing Officer: Zinn, Ryan

Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
  • Licensing Officer: Zinn, Ryan

High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, TJ; Shu, Qingyuan
  • Licensing Officer: Randhawa, Davinder

Substrates for vertical power devices
TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
  • Licensing Officer: Randhawa, Davinder

GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
  • Licensing Officer: Randhawa, Davinder

Lateral Interband Type-II Engineered (LITE) Detector
TS-062847 — Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Kodati, Sri Harsha; Lee, Seunghyun; Ronningen, TJ
  • Licensing Officer: Randhawa, Davinder

Light Source in Silicon Photonics
TS-062691 — The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Patton, Ryan; Wood, Michael
  • Licensing Officer: Zinn, Ryan

Method to Create Patterned Thin Films of Lithium Niobate for Hybrid Integrated Photonics
TS-062492 — Photonic integration is driven by demand for smaller size, lower cost, lower power consumption, easier assembly, higher reliability, and greater data density in modern photonic devices and systems. Among the many platforms, silicon photonics is particularly promising for photonic integration due t…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Chen, Li
  • Licensing Officer: Zinn, Ryan

High Efficiency LED Designs Using Quantum Well Engineering
TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.
Although extensive research and development over the past two decades has resulted in close to 100% external quantum efficiency (EQE) of InGaN based blue light emitting devices, efficiency of the longer visible wavelength emitting devices has remained relatively low. Spontaneous polarization origi…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Zhang, Kaitian
  • Licensing Officer: Randhawa, Davinder

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