# of Displayed Technologies: 5 / 5

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Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Karim, Md Rezaul
  • Licensing Officer: Hong, Dongsung

A robust high temperature semiconducting CO sensor
TS-030146 — A high-temperature metal oxide semiconductor based gas sensor that is doped with noble metals to increase stability and selectively
Machines that burn fuel for operation require numerous safety features to detect leaks of volatile and toxic gases that can be harmful or deadly to people if inhaled. Of these gases produced during combustion, carbon monoxide (CO) is one of the most important to consider due to its lethal capabili…
  • College: College of Arts & Sciences
  • Inventors: Dutta, Prabir; Akbar, Sheikh; Ramasamy, Ramamoorthy
  • Licensing Officer: Zinn, Ryan

Humidity interference-free high temperature CO2 sensor
TS-015256 — This novel CO2 sensor will allow faster and more accurate measurements under conditions such as humidity and high temperature
Carbon dioxide sensors are becoming increasingly important in many applications including monitoring air quality, CO2 sequestration, measuring metabolic activity in animals, and controlling combustion. While commercial sensors for such applications exist, there is nothing currently on the market d…
  • College: College of Arts & Sciences
  • Inventors: Dutta, Prabir; Akbar, Sheikh; Lee, Inhee
  • Licensing Officer: Zinn, Ryan

Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Myers, Roberto
  • Licensing Officer: Hong, Dongsung

Ultraviolet Light Emitting Diode
TS-014808 — A wide bandgap ultraviolet semiconductor device based on AlGaN nanowire heterojunctions doped with Gd.
Ultraviolet light emitting diodes (LEDs) which utilize rare earth phosphors in wide to medium gap semiconductors have been developed over the past two decades with increasing use of wide gap materials such as Gallium Nitrite (GaN) and Aluminum Nitride (AlN) in thin film electroluminescent devices.…
  • College: College of Engineering (COE)
  • Inventors: Myers, Roberto; Kent, Thomas
  • Licensing Officer: Hong, Dongsung

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