Available Technologies
# of Displayed Technologies: 9 / 9
Applied Category Filter (Click To Remove): Photonics/Optics
High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 —
In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
- Licensing Officer: Ashouripashaki, Mandana
3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, Theodore; Shu, Qingyuan
- Licensing Officer: Ashouripashaki, Mandana
Substrates for vertical power devices
TS-062951 — The Need
In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Ashouripashaki, Mandana
Lateral Interband Type-II Engineered (LITE) Detector
TS-062847 —
Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Kodati, Sri Harsha; Lee, Seunghyun; Ronningen, Theodore
- Licensing Officer: Ashouripashaki, Mandana
Light Source in Silicon Photonics
TS-062691 —
The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…
- College: College of Engineering (COE)
- Inventors: Reano, Ronald; Patton, Ryan; Wood, Michael
- Licensing Officer: Ashouripashaki, Mandana
High Efficiency LED Designs Using Quantum Well Engineering
TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.
Although extensive research and development over the past two decades has resulted in close to 100% external quantum efficiency (EQE) of InGaN based blue light emitting devices, efficiency of the longer visible wavelength emitting devices has remained relatively low. Spontaneous polarization origi…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
An Optical Fiber-Based Gamma Thermometer with Simple Design and Potential for Adjustable Axial Segmentation
TS-050215 — This invention proposes that an Optical Fiber-Based Gamma-Ray Calorimeter (OFBGC) sensor array can be designed, which does not require the distinct metallic thermal masses that are a part of the Optical Fiber-Based Gamma Thermometer (OFBGT).
As the world continues to grow and industrialize, the need for safe and efficient power is paramount. Currently, in nuclear fission reactors, there are Local Power Range Monitors (LPRM). They are ion chambers that contain fissile material. The electric current between their anode and cathode is mo…
- College: College of Engineering (COE)
- Inventors: Blue, Thomas E.; Birri, Anthony "Tony"
- Licensing Officer: Randhawa, Davinder
Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Karim, Md Rezaul
- Licensing Officer: Randhawa, Davinder
