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Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Karim, Md Rezaul
  • Licensing Officer: Hong, Dongsung

Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Myers, Roberto
  • Licensing Officer: Hong, Dongsung

Ultraviolet Light Emitting Diode
TS-014808 — A wide bandgap ultraviolet semiconductor device based on AlGaN nanowire heterojunctions doped with Gd.
Ultraviolet light emitting diodes (LEDs) which utilize rare earth phosphors in wide to medium gap semiconductors have been developed over the past two decades with increasing use of wide gap materials such as Gallium Nitrite (GaN) and Aluminum Nitride (AlN) in thin film electroluminescent devices.…
  • College: College of Engineering (COE)
  • Inventors: Myers, Roberto; Kent, Thomas
  • Licensing Officer: Hong, Dongsung

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