# of Displayed Technologies: 6 / 6

Applied Category Filter (Click To Remove): Semiconductors, MEMS & Nanotechnology


Categories

Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Karim, Md Rezaul
  • Licensing Officer: Hong, Dongsung

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Hong, Dongsung

AutoAlign Quantum Dot Nanoswitches
TS-014995 — Mass producible quantum dot design with tight tolerance manufacturing.
The differences between quantum dots and larger devices are the properties of quantum dots are closely related to size and shape. Until recently, quantum dots have suffered from at least one of the following issues the inability to create quantum dots in an exact location, to create quantum dots i…
  • College: College of Engineering (COE)
  • Inventors: Berger, Paul "Paul R."
  • Licensing Officer: Hong, Dongsung

Low Flux DC/DC Converter for Consumer Electronics
TS-014962 — A more efficient DC/DC converter composed of a front-stage circuit that allows for step-down DC/AC topology
DC/DC converters are used by hybrid electric vehicles, laptops, desktops, data-com systems, etc. Converters that optimize conversion of voltages last longer and improve energy efficiency. Therefore, improvements to existing converters could reduce time and money spent by manufacturers on faulty, l…
  • College: College of Engineering (COE)
  • Inventors: Wang, Jin; Zhang, Xuan; Zou, Ke
  • Licensing Officer: Hong, Dongsung

Couplers for intra-chip coupling to silicon photonic integrated circuits
TS-014948 — Photonic circuits, where data is transferred by beams of light instead of copper or gold wires, have the potential to revolutionize the fields of computer science and communications. Compared to state-of-the-art technologies, photonic circuits could provide faster processing speeds and data transf…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Sun, Peng
  • Licensing Officer: Hong, Dongsung

Loading icon