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Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Referenceless and Frequency Independent Radio Reciever
TS-037378 — A radio receiver that operates without the need for locally generated reference signals.
A radio frequency signal may typically consist of a single frequency carrier signal, modulated with some information signal. The purpose of a receiver is to extract the information signal from the carrier. This is commonly accomplished by mixing the received signal with one or more local reference…
  • College: College of Engineering (COE)
  • Inventors: Novak, Markus; Bojja venkatakrishnan, Satheesh; Volakis, John
  • Licensing Officer: Hong, Dongsung

Reflective Panel for Wireless Applications
TS-015134 — A reflective panel for reflecting electromagnetic waves comprised of a material with varying resistivity across the panel
Wireless systems are linked together through an electromagnetic field that propagates from the transmitter to the receiver, and as a result engineers must be concerned with the transmitting and receiving antennas and the propogation path to improve service. Modern wireless systems have been develo…
  • College: College of Engineering (COE)
  • Inventors: Burnside, Walter; Chuang, Chiwei; Steinberger, David
  • Licensing Officer: Hong, Dongsung

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