TS-063979 —

TS-063961 — The Need In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…

TS-063784 — The Need In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…

TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…

TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…

TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…

TS-063362 — Introducing our Low-Drag Smart Tether System—the future of fluid speed and direction measurement. Experience unmatched accuracy, energy efficiency, and reliability, revolutionizing how we perceive and utilize wind data in the modern age.

TS-063309 — The Need Over five billion wireless devices are connected to wireless service providers worldwide, with a constant emergence of new and improved technologies. Fifth Generation (5G) wireless technologies are rapidly being deployed due to the demand for fast and more reliable services for mobile user…

TS-063169 — Road safety is a paramount concern. Unpredictable road conditions, such as bumps and uneven surfaces, can pose significant risks to drivers. There is a pressing need for a technology that can sense and alert drivers about these road surface conditions in real-time, enhancing safety and improving t…

TS-063156 — In the era of 5G and beyond, wireless base station infrastructures require power amplifiers (PAs) that maintain high efficiency from backoff to peak power level. Conventional Doherty PAs, while popular, are inherently narrowband due to their reliance on a quarter-wave transmission line (TL). This …

TS-063148 — In an era of rapid growth in modern communication, there is an increasing demand for multi-band and broadband power amplifiers (PA) for signals with large peak-to-average power ratio (PAPR). The PA, being one of the most power-consuming components in a transmitter system, needs to achieve high ave…

TS-063069 — In the wake of the global pandemic caused by SARS-CoV-2, the need for rapid, accurate, and efficient diagnostic methods for respiratory viral infections has become more critical than ever. Traditional diagnostic methods, while reliable, are often time-consuming, labor-intensive, and lack the neces…

TS-063058 — The Need In the era of electrified vehicles, there is a growing demand for efficient power systems that can provide high voltage and/or high output power to meet strict design requirements. These power systems also need to supply power to other equipment and circuits, such as DC-DC converters, on-b…

TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance

TS-063051 — A stand-off gas detection system with active, laser-based sensing and imaging capabilities for commercial use

TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.

TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…

TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062847 — Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…