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Photon-assisted MOCVD growth of II-IV-N2, II-III2-IV-N4 semiconductors and their heterostructures with III-N
TS-048645 — A novel photon-assisted MOCVD growth method to synthesize II-IV-N2 materials
Zn-IV-N2 and Mg-IV-N2 compounds have been reported to be synthesized by a number of techniques including chemical vapor deposition (CVD), vapor-liquid-solid (VLS) technique, ammonothermal synthesis, radio frequency (RF) sputtering, pulsed laser deposition, molecular beam epitaxy (MBE) and metalorg…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Rezaul Karim, Md
  • Licensing Officer: Hong, Dongsung

Method for Producing Epitaxial Semiconductor Nanowire Heterostructures on Metal Foil
TS-037409 — Semiconductor nanowire LEDs grown directly on flexible metal foil.
The formation of dislocations in conventional thin film devices due to lattice mismatch strain restricts the choice of substrate and heterointerface. Nanowires can accommodate large strains due to their surface to volume ratio that permits large lattice mismatched heterostructures without dislocat…
  • College: College of Engineering (COE)
  • Inventors: Myers, Roberto; May, Brelon; Sarwar, A.T.M. Golam
  • Licensing Officer: Hong, Dongsung

Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Myers, Roberto
  • Licensing Officer: Hong, Dongsung

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