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Ultraviolet Light Emitting Diode
TS-014808 — A wide bandgap ultraviolet semiconductor device based on AlGaN nanowire heterojunctions doped with Gd.
Ultraviolet light emitting diodes (LEDs) which utilize rare earth phosphors in wide to medium gap semiconductors have been developed over the past two decades with increasing use of wide gap materials such as Gallium Nitrite (GaN) and Aluminum Nitride (AlN) in thin film electroluminescent devices.…
  • College: College of Engineering (COE)
  • Inventors: Myers, Roberto; Kent, Thomas
  • Licensing Officer: Hong, Dongsung

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