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Gd Doped AlGaN Ultraviolet Light Emitting Diode
TS-061846 — In recent years electrically driven devices utilizing rare earth (RE) phosphors in wide/medium gap semiconductors have been developed. These thin film electroluminescent (EL) devices have found applications as visible and IR emitters, and with the increasing use of wide gap materials (e.g., GaN, AlN), are being developed to take advantage of phosphors in the blue and ultraviolet (UV) spectrums. EL systems constructed of Gd:AlN have been investigated, showing potential for use in various spectroscopic and lithographic applications in UV and active optoelectronic devices.
The Need To address concerns and limitations with the performance of Gd:AlN technologies, an alternative, cost-effective, efficient device capable of performing at lower biases than previously developed Gd:AlN EL products are required. The Technology A self-assembled, AlxGa1–xN polariz…
  • College: College of Engineering (COE)
  • Inventors: Myers, Roberto; Kent, Thomas
  • Licensing Officer: Randhawa, Davinder

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