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In situ damage free etching of Ga2O3 using Ga flux for fabricating high aspect ratio 3D structures
TS-062975 —
With a high theoretical breakdown field strength, β-Ga2O3 has the potential to be useful in power switching and high frequency power amplifying devices. For any device technology to be competitive, damage free etching techniques are necessary. All current dry etching recipes in β-Ga2O3 h…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Fiedler, Andreas; Kalarickal, Nidhin Kurian
- Licensing Officer: Zinn, Ryan
