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Method for Producing Epitaxial Semiconductor Nanowire Heterostructures on Metal Foil
TS-037409 — Semiconductor nanowire LEDs grown directly on flexible metal foil.
The formation of dislocations in conventional thin film devices due to lattice mismatch strain restricts the choice of substrate and heterointerface. Nanowires can accommodate large strains due to their surface to volume ratio that permits large lattice mismatched heterostructures without dislocat…
  • College: College of Engineering (COE)
  • Inventors: Myers, Roberto; May, Brelon; Sarwar, A.T.M. Golam
  • Licensing Officer: Hong, Dongsung

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