Available Technologies
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Applied Category Filter (Click To Remove): Photonics/Optics
GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Simulcure Technique - Fabrication and Preparation of Structural Composites
TS-014977 — A fabrication technique to prepare a composite structure with sensor elements distributed in 3-D space for visualizing stress distribution.
Trends in home automation, wearable electronics, and autonomous vehicles have created networked ecosystems, in which computers coexist and play a critical role. In these ecosystems, sensors provide necessary inputs to monitor the environment and take situation-specific action. Currently, sensors a…
- College: College of Engineering (COE)
- Inventors: Sundaresan, Vishnu Baba
- Licensing Officer: Randhawa, Davinder
