Next-Gen InGaN Quantum Wells for High-Efficiency Amber LEDs
TS-071961 — The Need
Despite near-perfect external quantum efficiency in blue InGaN LEDs, devices emitting green, amber, and longer visible wavelengths remain inefficient. This is due to internal electric fields and charge separation in conventional quantum wells, which worsen with higher indium content and wid…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder