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Next-Gen InGaN Quantum Wells for High-Efficiency Amber LEDs
TS-071961 — The Need
Despite near-perfect external quantum efficiency in blue InGaN LEDs, devices emitting green, amber, and longer visible wavelengths remain inefficient. This is due to internal electric fields and charge separation in conventional quantum wells, which worsen with higher indium content and wid…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
- Licensing Officer: Zinn, Ryan
