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Photon-assisted MOCVD growth of II-IV-N2, II-III2-IV-N4 semiconductors and their heterostructures with III-N
TS-048645 — A novel photon-assisted MOCVD growth method to synthesize II-IV-N2 materials
Zn-IV-N2 and Mg-IV-N2 compounds have been reported to be synthesized by a number of techniques including chemical vapor deposition (CVD), vapor-liquid-solid (VLS) technique, ammonothermal synthesis, radio frequency (RF) sputtering, pulsed laser deposition, molecular beam epitaxy (MBE) and metalorg…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Rezaul Karim, Md
  • Licensing Officer: Hong, Dongsung

Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Karim, Md Rezaul
  • Licensing Officer: Hong, Dongsung

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