# of Displayed Technologies: 3 / 3


Categories

Dielectric heterojunction device
TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Moore, Wyatt; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

High Permittivity Dielectric Junction Termination for Vertical High Voltage Devices
TS-048635 — A novel edge termination concept using extreme permittivity dielectrics is proposed to effectively manage peak electric fields in vertical power devices
Gallium Nitride (GaN)-based devices are promising for high frequency and power applications because they have a superior combination of the critical electric field, electron mobility, saturation drift velocity, and power density. With the recent interest in solid-state power electronics technologi…
  • College: College of Engineering (COE)
  • Inventors: Lee, Hyunsoo; Rahman, Mohammad Wahidur "Wahidur"; Rajan, Siddharth; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Loading icon