Substrates for vertical power devicesThe Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer development, one that not only ensures the highest quality but also accelerates growth rates and enhances surface morphology. To address this imperative, we introduce MOCVD epitaxial technology, a groundbreaking solution that unlocks the potential for next-generation power devices. The Technology Our MOCVD epitaxial technology represents a significant leap forward in semiconductor manufacturing. It enables the deposition of high-quality, thick semiconductor drift layers on substrates with unprecedented speed and precision. This breakthrough method optimizes the epitaxial growth process, resulting in superior surface morphology and the potential to achieve breakthrough voltage ratings exceeding 20 kV. Commercial Applications
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Tech IDT2023-152 CollegeLicensing ManagerRandhawa, Davinder Inventors(None) CategoriesPublications
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