Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors

The Need

In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (HYPE), molecular beam epitaxy (MBE), and metal-organic chemical vapor deposition (MOCVD). However, a significant bottleneck in this process is the presence of background carbon (C) impurity in nitride-based semiconductors. There is a pressing need for innovative methods to minimize background carbon impurity in nitride-based semiconductors to propel device technologies forward. The devices and methods discussed herein have been specifically designed to address this critical need.

The Technology

The technology at the heart of this solution involves Laser-assisted metal-organic chemical vapor deposition (MOCVD) devices. These devices are equipped with essential components:

  • A chamber-defining wall
  • Laser windows, which facilitate the transmission of laser beams
  • Conduits for precise fluid flow
  • A rotatable substrate support surface within the chamber
  • A laser device for producing a laser beam

The laser windows are strategically positioned within the chamber wall to direct the laser beam across the chamber in a plane that runs above and parallel to the rotatable substrate support surface. This laser beam is located within 10 mm or less from the surface, ensuring accurate and efficient processing. The conduits introduce precursor materials into the chamber, allowing them to flow through the laser beam before reaching the substrate support surface.

Additionally, these devices can accommodate various precursor types, including V-group and III-group precursors, offering flexibility for different material synthesis processes. The technology can also feature a source distributor for precise control of precursor introduction.

Commercial Applications

The technology has a wide range of commercial applications, including but not limited to:

  1. Semiconductor Fabrication: Ideal for semiconductor film deposition, enhancing the quality of nitride-based semiconductors for optoelectronic and power electronic devices.

  2. LED Manufacturing: Enabling precise and controlled growth of nitride-based materials for high-performance LEDs.

  3. Power Electronics: Enhancing the quality of semiconductors for efficient power electronic devices and components.

  4. Solar Cells: Supporting the growth of advanced materials for solar cell technologies, ensuring increased efficiency and durability.

  5. Research and Development: Providing a valuable tool for research institutions and laboratories to explore novel material systems for various applications.


The adoption of these Laser-assisted MOCVD devices brings several benefits and advantages to the semiconductor industry and beyond:

  1. Reduced Carbon Impurity: Minimizes the incorporation of carbon impurities into nitride-based semiconductors, enhancing the purity and performance of the materials.

  2. Improved Efficiency: The precise positioning of the laser beam near the substrate support surface leads to more efficient material deposition, resulting in higher quality products.

  3. Versatility: Accommodates various precursor materials and offers the flexibility to adapt to different material synthesis processes.

  4. Enhanced Quality: Contributes to the production of superior optoelectronic and power electronic devices, LEDs, and solar cells.

  5. Research Capabilities: Facilitates cutting-edge research and development in the field of semiconductor material systems, empowering innovation.

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