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Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
  • Licensing Officer: Randhawa, Davinder

Modular Dc Circuit Breaker with Integrated Energy Storage for Future Dc Networks
TS-051200 — Traditional AC distribution is not suitable for a wide range of applications in regard to efficiency, cost, and power carrying capacity compared to alternative distributions. Low voltage distribution suffers from high transmission losses due to higher current requirements necessitating thicker, he…
  • College: College of Engineering (COE)
  • Inventors: Wang, Jin; Na, Risha; Zhang, Yue
  • Licensing Officer: Ashouripashaki, Mandana

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Zinn, Ryan

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