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Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need
In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
- Licensing Officer: Randhawa, Davinder
Scalable laser-assisted MOCVD chamber design with laser array input
TS-050244 — A design of scalable laser-assisted MOCVD chamber for III-nitrides and other semiconductors with a laser array input.
III-nitrides represent an important semiconductor material system for both optoelectronic and power electronic device applications. Advantages for III-nitrides include high electron saturation velocity, high critical electric field, high radiation resistance and decent thermal performance. Therefo…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying
- Licensing Officer: Randhawa, Davinder
