Available Technologies
# of Displayed Technologies: 6 / 6
Applied Category Filter (Click To Remove): MEMS & Nanotechnology
GRAFT-Stereo: Cost-Effective, High-Accuracy 3D Depth Perception
TS-071747 — The Need
High-accuracy 3D depth perception is critical for autonomous systems, but current stereo camera methods falter in complex outdoor environments. While LiDAR can improve accuracy, its effectiveness plummets when using sparse data from affordable, lower-beam sensors, making high performance …
- College: College of Engineering (COE)
- Inventors: Chao, Wei-Lun "Harry"; Asare Boateng, Jeffery; Jeon, Sooyoung; Krishna, Sanjay; Musah, Tawfiq; Yoo, Jinsu
- Licensing Officer: Randhawa, Davinder
Direct Current Generation By Recycling Omnipresent EM Waves
TS-063309 — The Need
Over five billion wireless devices are connected to wireless service providers worldwide, with a constant emergence of new and improved technologies. Fifth Generation (5G) wireless technologies are rapidly being deployed due to the demand for fast and more reliable services for mobile user…
- College: College of Engineering (COE)
- Inventors: Wang, Xiaoguang "William"; Lyu, Hualiang
- Licensing Officer: Randhawa, Davinder
Substrates for vertical power devices
TS-062951 — The Need
In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
Antimonide based Separate Absorption Charge and Multiplication Avalanche Photodiode
TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise an…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Formation of carbon containing semi-insulating layers in β-Ga2O3 based structures and devices
TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.
The Need
β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, challenges exist in the controlled doping of semi-insulating layers of β-Ga2O3, limiting the material’s full potenti…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
Development of thick β-(AlxGa1-x)2O3 films with low-Al content for vertical power devices
TS-061767 — Current semiconductor materials used in power devices are reaching their performance limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the ability to support next-generation optoelectronic and high-power device applications.
The Need
Currently, β-Ga2O3 is used as the semiconductor material for developing next-generation electronic devices to support various high-power applications ranging from telecommunication to electric vehicles (EVs). Yet, the use of β-Ga2O3 is introducing significant production costs…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
