Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need
In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
- Licensing Officer: Randhawa, Davinder
RF Energy Harvesting Wireless Mobile Device Charger
TS-062601 —
Only a small fraction of the radio frequency (RF) energy transmitted by smartphones and other wireless devices is used to communicate with a wireless access point. It would be useful to collect or harvest the unused RF signals in order to convert them to direct current (DC) power and supplement th…
- College: College of Engineering (COE)
- Inventors: Chen, Chi-Chih; Koksal, C. Emre; Shroff, Ness; Tallos, Roland
- Licensing Officer: Zinn, Ryan
Passive RF Rectifier Circuit Design with Harmonic Harvester
TS-062596 —
Conventional rectifying circuit designs convert alternating-current (AC) signals into direct-current (DC) signals via the used of diodes. Low-barrier Schottky diodes are used in low AC power cases such as with ambient radio frequency (RF) signals. Ideally, each diode is only turned on during the p…
- College: College of Engineering (COE)
- Inventors: Chen, Chi-Chih
- Licensing Officer: Zinn, Ryan
Method to Create Patterned Thin Films of Lithium Niobate for Hybrid Integrated Photonics
TS-062492 —
Photonic integration is driven by demand for smaller size, lower cost, lower power consumption, easier assembly, higher reliability, and greater data density in modern photonic devices and systems. Among the many platforms, silicon photonics is particularly promising for photonic integration due t…
- College: College of Engineering (COE)
- Inventors: Reano, Ronald; Chen, Li
- Licensing Officer: Zinn, Ryan
Scalable laser-assisted MOCVD chamber design with laser array input
TS-050244 — A design of scalable laser-assisted MOCVD chamber for III-nitrides and other semiconductors with a laser array input.
III-nitrides represent an important semiconductor material system for both optoelectronic and power electronic device applications. Advantages for III-nitrides include high electron saturation velocity, high critical electric field, high radiation resistance and decent thermal performance. Therefo…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying
- Licensing Officer: Randhawa, Davinder