# of Displayed Technologies: 6 / 6

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Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

Laser Imaging of Gases for Real-Time Determination of Concentration and Location
TS-063051 — A stand-off gas detection system with active, laser-based sensing and imaging capabilities for commercial use
There is a critical need for a reliable, cost-effective, and safe method to detect gas leaks, particularly in gas lines to ensure the safety of service providers and customers. Distribution companies receive over 100,000 calls per year responding to gas odors, indicating potential leaks. The major…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Ball, Christopher; Fink, Douglas "Rudy"; Fuller, Earl; Mooney, Douglas; Ringel, Brett; Ronningen, TJ
  • Licensing Officer: Randhawa, Davinder

GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
  • Licensing Officer: Randhawa, Davinder

Antimonide based Separate Absorption Charge and Multiplication Avalanche Photodiode
TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise an…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
  • Licensing Officer: Randhawa, Davinder

A Model Based Assessment Approach and an Automation Environment for Qualification of Embedded Digital Devices
TS-042856 — A Framework and Automatization process designed to determine the functionality of Embedded Digital Devices.
As our technology becomes increasingly complex, so does the quantity and variation of the Embedded Digital Device [EDD] components that are required within the project. Because not every device is made perfectly to specifications due to a propagation of random error, it is important to have a dive…
  • College: College of Engineering (COE)
  • Inventors: Smidts, Carol; Diao, Xiaoxu; Li, Boyuan
  • Licensing Officer: Mess, David

Simulcure Technique - Fabrication and Preparation of Structural Composites
TS-014977 — A fabrication technique to prepare a composite structure with sensor elements distributed in 3-D space for visualizing stress distribution.
Trends in home automation, wearable electronics, and autonomous vehicles have created networked ecosystems, in which computers coexist and play a critical role. In these ecosystems, sensors provide necessary inputs to monitor the environment and take situation-specific action. Currently, sensors a…
  • College: College of Engineering (COE)
  • Inventors: Sundaresan, Vishnu Baba
  • Licensing Officer: Randhawa, Davinder

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