The Need

In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final product.

The Technology

Our novel method revolutionizes GaN etching by using a Gallium beam flux and oxygen in a vacuum environment. This process leverages the fact that GaN readily oxidizes into Gallium Oxide (GaO_x). By exposing Ga₂O₃ to a Gallium flux, we can etch away the Ga₂O₃, leaving the undamaged GaN underneath. This process can be repeated multiple times to create intricate 3D structures of GaN.

Commercial Applications

• Microelectronics: The creation of fin, nanopillars, and other vertical sidewall structures can significantly enhance the performance of microelectronic devices.
• LED Manufacturing: This technology can be used to improve the efficiency and longevity of LED lights.
• Power Electronics: The ability to create undamaged GaN structures can lead to more robust and reliable power electronic devices.

Benefits/Advantages

• Precision: This method allows for the creation of intricate 3D structures with high precision.
• No Damage: Unlike traditional etching processes, our method does not damage the GaN during the etching process.
• Repeatability: The process can be repeated multiple times, allowing for the creation of complex structures.
• Efficiency: This method is more efficient than traditional processes, potentially leading to cost savings in mass production.