Available Technologies
# of Displayed Technologies: 10 / 21
Applied Category Filter (Click To Remove): Semiconductors, Circuits, & Electronic Components
A device for improving the breakdown performance of gallium oxide semiconductors
TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…
- College: College of Engineering (COE)
- Inventors: Dheenan, Ashok; Dhara, Sushovan; Rajan, Siddharth
- Licensing Officer: Zinn, Ryan
Open Circuit Voltage Photodetector
TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.
Existing photodetectors are susceptible to various noise sources, such as thermal and electronic. The noise can degrade the signal-to-noise ratio and affect the accuracy of measurements, particularly in low-light conditions.
This technology is an open-circuit voltage photodetector (OCVP) that…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Fuller, Earl; Kazemi, Alireza; Khalil, Waleed; Ronningen, TJ; Smith, Dale "Shane"; Specht, Teressa; Tantawy, Ramy "Ramy"
- Licensing Officer: Zinn, Ryan
Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
- Licensing Officer: Zinn, Ryan
High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 —
In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 —
In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, TJ; Shu, Qingyuan
- Licensing Officer: Zinn, Ryan
Surface barrier engineering using AlGaO/GaO
TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.
Ga2O3 is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop t…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dhara, Sushovan
- Licensing Officer: Zinn, Ryan
Light Source in Silicon Photonics
TS-062691 —
The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…
- College: College of Engineering (COE)
- Inventors: Reano, Ronald; Patton, Ryan; Wood, Michael
- Licensing Officer: Zinn, Ryan
RF Energy Harvesting Wireless Mobile Device Charger
TS-062601 —
Only a small fraction of the radio frequency (RF) energy transmitted by smartphones and other wireless devices is used to communicate with a wireless access point. It would be useful to collect or harvest the unused RF signals in order to convert them to direct current (DC) power and supplement th…
- College: College of Engineering (COE)
- Inventors: Chen, Chi-Chih; Koksal, C. Emre; Shroff, Ness; Tallos, Roland
- Licensing Officer: Zinn, Ryan
Passive RF Rectifier Circuit Design with Harmonic Harvester
TS-062596 —
Conventional rectifying circuit designs convert alternating-current (AC) signals into direct-current (DC) signals via the used of diodes. Low-barrier Schottky diodes are used in low AC power cases such as with ambient radio frequency (RF) signals. Ideally, each diode is only turned on during the p…
- College: College of Engineering (COE)
- Inventors: Chen, Chi-Chih
- Licensing Officer: Zinn, Ryan
