Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need
In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
- Licensing Officer: Randhawa, Davinder
Single-Input Broadband Doherty-HDmax Continuum Power Amplifier
TS-063156 —
In the era of 5G and beyond, wireless base station infrastructures require power amplifiers (PAs) that maintain high efficiency from backoff to peak power level. Conventional Doherty PAs, while popular, are inherently narrowband due to their reliance on a quarter-wave transmission line (TL). This …
- College: College of Engineering (COE)
- Inventors: Roblin, Patrick; Liang, Chenyu
- Licensing Officer: Ashouripashaki, Mandana