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Substrates for vertical power devices
TS-062951 — The Need
In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
Formation of carbon containing semi-insulating layers in β-Ga2O3 based structures and devices
TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.
The Need
β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, challenges exist in the controlled doping of semi-insulating layers of β-Ga2O3, limiting the material’s full potenti…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
High Efficiency LED Designs Using Quantum Well Engineering
TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.
Although extensive research and development over the past two decades has resulted in close to 100% external quantum efficiency (EQE) of InGaN based blue light emitting devices, efficiency of the longer visible wavelength emitting devices has remained relatively low. Spontaneous polarization origi…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
