# of Displayed Technologies: 2 / 2


Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
  • Licensing Officer: Zinn, Ryan

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Zinn, Ryan

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