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Method for Utilizing Tunnel Junction in the Device Integration of Transistor on Light-Emitting Diode
TS-050233 — This device utilizes a tunnel junction on top of a light-emitting diode (LED) to enable direct integration of a transistor on top of the tunnel junction.
Faster and more efficient ways to communicate are at the forefront of valuable technologies that are being developed. The majority of us are connected to satellites or WiFi for the most part of every day. Li-Fi (short for light fidelity) is wireless communication technology which utilizes light to…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Jamal-Eddine, Zane
  • Licensing Officer: Hong, Dongsung

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Hong, Dongsung

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