Isolated Source Electrode Vertical Fin Field Effect Transistors (ISE-FinFET)
TS-073373 —
Next‑generation power electronic systems require devices that deliver high breakdown voltage, large current handling, and fast switching while maintaining manufacturability at scale. Vertical FinFETs offer compelling performance advantages over incumbent bipolar and planar technologies, but thei…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Joishi, Chandan "Chandan"; Srikanth, Akilesh
- Licensing Officer: Ashouripashaki, Mandana