The Need

β-Ga₂O₃ has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga₂O₃) on Ga₂O₃ substrates. Existing methods often result in Ga₂O₃ layers with rough surfaces, uncontrolled doping, and limitations in thickness.

The Technology

This technology introduces a novel approach: a thin "buffer" layer of aluminum gallium oxide ((Al_xGa_i-x)₂O₃) is deposited on the Ga₂O₃ substrate, followed by the growth of a thick Ga₂O₃ layer. This method significantly improves the surface quality and control over the electrical properties of the Ga₂O₃ layer. By enabling the fabrication of high-quality thick Ga₂O₃ layers, this technology paves the way for the development of more efficient and powerful electronic devices.

Commercial Applications

This technology has the potential to revolutionize high-power electronics. By enabling the growth of high-quality, thick Ga₂O₃ layers, it opens doors to:

• More efficient power electronics: Ga₂O₃ devices can operate at higher voltages and temperatures, reducing energy losses and increasing efficiency in applications like power converters, inverters, and rectifiers used in electric vehicles, renewable energy systems (solar, wind), and industrial motor drives.
• Smaller and lighter devices: The improved performance of Ga₂O₃ allows for the design of smaller and lighter power electronics components, crucial for applications in aerospace, defense, and portable electronics.
• Enhanced reliability and durability: Ga₂O₃ devices exhibit superior robustness under harsh conditions, making them ideal for applications in extreme environments, such as those encountered in space and high-temperature industrial settings.

Benefits/Advantages

• Enables the fabrication of high-quality Ga₂O₃ layers with smoother surfaces and better control over electrical properties.
• Helps to reduce defects and improve the overall quality of the Ga₂O₃ layers.