The Need

Next-generation power electronics demand materials that can support ultra-high breakdown voltages, low leakage currents, and scalable manufacturing. While β-Ga₂O₃ is highly attractive for these applications, device performance has been limited by the lack of high-quality, thick drift layers with smooth surfaces and controlled doping. Existing growth approaches often introduce cracking, surface defects, or require costly post-growth polishing, constraining yield, device reliability, and commercial viability relative to incumbent GaN and SiC technologies.

The Technology

OSU engineers have developed a novel epitaxial growth approach for producing thick, high-quality β-Ga₂O₃ films on (011)-oriented native substrates using a scalable MOCVD platform. The method enables rapid growth of smooth, crack-free films with excellent crystalline quality and controlled electrical properties, eliminating the need for post-growth surface treatments. The resulting material is well-suited for vertical device architectures and supports the fabrication of next-generation β-Ga₂O₃ power devices with substantially improved performance margins.

Commercial Applications

• Power devices for electric grid, EV charging, and renewable energy systems
• Advanced power electronics for aerospace and industrial applications
• Vertical β-Ga₂O₃ MOSFETs and FinFETs for power conversion

Benefits/Advantages

• Superior material quality: Smooth, crack-free thick films with high crystalline integrity
• Manufacturing efficiency: High growth rates without chemical–mechanical polishing
• Device performance: Enables higher breakdown voltages and lower leakage currents
• Scalability: Compatible with existing MOCVD infrastructure and native β-Ga₂O₃ substrates