The Need

Many emerging applications in communications, sensing, and imaging require detectors that can operate with high sensitivity at infrared wavelengths where silicon alone performs poorly. Existing infrared detector technologies often involve trade‑offs between sensitivity, noise, manufacturability, cost, and system complexity. In particular, achieving internal signal amplification in the infrared while maintaining compatibility with large‑scale silicon manufacturing remains a challenge. This gap limits performance and adoption in applications that benefit from detecting very low light levels with compact, low‑power systems.

The Technology

OSU Engineering Professor Dr. Sanjay Krishna has developed a new class of infrared photodetectors that combine advanced semiconductor materials with silicon in a unified device architecture. The approach strategically separates light absorption from signal amplification, allowing each function to be optimized independently. By leveraging silicon for signal multiplication while integrating non‑silicon materials for infrared sensitivity, the design enables internal gain at infrared wavelengths while remaining compatible with established semiconductor processing and integration pathways. The result is a scalable, high‑performance detector platform.

Commercial Applications

• High‑speed optical receivers for data communications
• Infrared sensing and imaging systems
• Eye‑safe ranging and detection platforms
• Low‑light detection systems for industrial, medical, or aerospace markets

Benefits/Advantages

• Enhanced sensitivity: Internal signal amplification enables detection of very low light levels
• Silicon compatibility: Aligns with large‑area, high‑yield semiconductor manufacturing
• Broad applicability: Suitable for multiple infrared wavelength regimes
• System‑level benefits: Potential reductions in size, power consumption, and overall system cost