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A device for improving the breakdown performance of gallium oxide semiconductors
TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…
  • College: College of Engineering (COE)
  • Inventors: Dheenan, Ashok; Dhara, Sushovan; Rajan, Siddharth
  • Licensing Officer: Zinn, Ryan

Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

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