Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high critical electric field strength, which translates to the creation of high-voltage switches and powerful radiofrequency devices. As applied in 3-dimensional fabrication, β-Ga2O3 epilayers can be utilized to prepare sub-micron products such as high-power transistors.

The Need

While β-Ga2O3 semiconductors have demonstrated a high potential for high-voltage applications, the overall performances of those devices are still far away from the theoretical limit for β-Ga2O3. The limited breakdown of β-Ga2O3 restricts its use in high-voltage power electronics applications.

The Technology

This technology is a two-terminal lateral device that improves the breakdown of power electronics. The apparatus comprises a dielectric layer deposited on a lower-permittivity semiconductor like Ga2O3 or (AlGa)2O3. It also has trenches in which the high-k dielectric is etched away and filled with a lower permittivity material. Thus far, the inventors have shown proof of concept through laboratory simulations, which demonstrated enhanced breakdown performance and tunability.

Commercial Applications

This invention can be used to create high-performance semiconductors for high-voltage power applications.

Benefits/Advantages

Existing β-Ga2O3 semiconductor technologies have limited breakdown voltage and tunability. This invention provides a layered device that improves the breakdown performance and tunability of β-Ga2O3 semiconductors.

Patents

Provisional 63/567,705