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Invention of ultra-wide bandgap oxide semiconductor with p-type conductivity
TS-063961 — The Need
In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Ultrawide bandgap oxide semiconductor LiGaO2 with p-type conductivity for power device applications
TS-063784 — The Need
In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
High Efficiency LED Designs Using Quantum Well Engineering
TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.
Although extensive research and development over the past two decades has resulted in close to 100% external quantum efficiency (EQE) of InGaN based blue light emitting devices, efficiency of the longer visible wavelength emitting devices has remained relatively low. Spontaneous polarization origi…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
