TS-074864 — Modern structural systems increasingly demand integrated sensing, actuation, and health monitoring capabilities, particularly in aerospace, automotive, and advanced manufacturing. However, current approaches rely on separately fabricated sensors that are later attached to structures, introducing r…

TS-074383 — Many advanced sensing, imaging, and optoelectronic systems rely on compound semiconductors that outperform silicon in key spectral and electronic regimes, particularly in the infrared. However, these materials are expensive and difficult to scale, while silicon remains the industry standard for hi…

TS-073809 — High-sensitivity detection in the mid-wave and long-wave infrared (MWIR/LWIR) remains constrained by detector noise, limited gain, and manufacturing challenges. While HgCdTe avalanche photodiodes can deliver excellent performance, they suffer from high cost, low yield, and limited manufacturabilit…

TS-071961 — The Need Despite near-perfect external quantum efficiency in blue InGaN LEDs, devices emitting green, amber, and longer visible wavelengths remain inefficient. This is due to internal electric fields and charge separation in conventional quantum wells, which worsen with higher indium content and wid…

TS-071747 — High-accuracy 3D depth perception is critical for autonomous systems, but current stereo camera methods falter in complex outdoor environments. While LiDAR can improve accuracy, its effectiveness plummets when using sparse data from affordable, lower-beam sensors, making high performance prohibiti…

TS-070302 — The Need Current quantum computing technologies face significant challenges in scalability, error correction, and computational efficiency. There is a critical need for a robust, scalable quantum processor that can perform complex computations with high fidelity and low error rates, enabling advance…

TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…

TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062847 — Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…

TS-050215 — This invention proposes that an Optical Fiber-Based Gamma-Ray Calorimeter (OFBGC) sensor array can be designed, which does not require the distinct metallic thermal masses that are a part of the Optical Fiber-Based Gamma Thermometer (OFBGT).