A device for improving the breakdown performance of gallium oxide semiconductors
TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…
- College: College of Engineering (COE)
- Inventors: Dheenan, Ashok; Dhara, Sushovan; Rajan, Siddharth
- Licensing Officer: Zinn, Ryan
Open Circuit Voltage Photodetector
TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect
, in which photons (light particles) strike the semiconductor material
, creating electron-hole pairs that lead to the flow of electrical current that can be measured.
Existing photodetectors are susceptible to various noise sources, such as thermal and electronic. The noise can degrade the signal-to-noise ratio and affect the accuracy of measurements, particularly in low-light conditions.
This technology is an open-circuit voltage photodetector (OCVP) that…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Fuller, Earl; Kazemi, Alireza; Khalil, Waleed; Ronningen, TJ; Smith, Dale "Shane"; Specht, Teressa; Tantawy, Ramy "Ramy"
- Licensing Officer: Zinn, Ryan
Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g.
, OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays
, which rely on external light sources
, emissive displays generate light
, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications
, including mobile devices
, AV/VR headsets
, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
- Licensing Officer: Zinn, Ryan
Bio-Matched Horn: A Novel 1-9 GHz On-Body Antenna for Low-Loss Biomedical Telemetry with Implants
TS-065135 — The use of wearable health devices has more than tripled in recent years due to the ability of these products to collect health data to detect potential health events (e.g., heart attacks), manage chronic diseases, and track physical activity. Wearable technologies have been shown to decrease the nu…
- College: College of Engineering (COE)
- Inventors: Blauert, John; Kiourti, Asimina
- Licensing Officer: Randhawa, Davinder
Methods to improve the jitter and time walk of integrated constant fraction discriminators
TS-064826 — The Need
Accurate measurements of energy and time-of-arrival of photons, particles, or ionizing radiation are crucial for identifying individual particles and enhancing spatial and temporal resolution in various systems. Technologies such as Light Detection and Ranging (LiDAR), positron emission to…
- College: College of Arts & Sciences
- Inventors: Kagan, Harris; Abusareya, Mo'men; Khalil, Waleed; Smith, Dale "Shane"
- Licensing Officer: Dahlman, Jason "Jay"
Invention of ultra-wide bandgap oxide semiconductor with p-type conductivity
TS-063961 — The Need
In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Ultrawide bandgap oxide semiconductor LiGaO2 with p-type conductivity for power device applications
TS-063784 — The Need
In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need
In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
- Licensing Officer: Randhawa, Davinder
High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 —
In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
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