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Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
  • Licensing Officer: Randhawa, Davinder

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