Available Technologies
# of Displayed Technologies: 2 / 2
A device for improving the breakdown performance of gallium oxide semiconductors
TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…
- College: College of Engineering (COE)
- Inventors: Dheenan, Ashok; Dhara, Sushovan; Rajan, Siddharth
- Licensing Officer: Zinn, Ryan
Surface barrier engineering using AlGaO/GaO
TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.
Ga2O3 is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop t…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dhara, Sushovan
- Licensing Officer: Zinn, Ryan
