The Need

Ga₂O₃ is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop techniques for manufacturing that result in a higher breakdown field.

The Technology

Dr. Siddharth Rajan, along with a team at The Ohio State University, have developed a novel surface barrier method using AlGaO or GaO. For example, the method involves deposition of AlGaO and/or GaO between multiple electrode layers and an optional dielectric layer. In some configurations, there may be only Ga₂O₃ between the electrodes. In other cases, there may be an additional layer of graded (Al_xGa_1-x)₂O₃ in addition to the layer of Ga₂O₃. All configurations may include an optional dielectric layer.

Commercial Applications

• Power electronics
• RF circuity

Benefits/Advantages

• Higher power density
• Easier and more consistent fabrication
• Improved tunneling current
• Improved Schottky barrier height