TS-061767 — Current semiconductor materials used in power devices are reaching their performance
limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the abi
lity to support next-generation optoelectronic and high-power device app
lications.
The Need
Currently, β-Ga2O3 is used as the semiconductor material for developing next-generation electronic devices to support various high-power applications ranging from telecommunication to electric vehicles (EVs). Yet, the use of β-Ga2O3 is introducing significant production costs…