TS-074578 — Opportunity Overview This technology is a web‑based, multi‑user platform designed to rigorously study how people interact with AI systems in real time. Unlike traditional survey tools or product A/B testing environments, the platform supports live human–AI collaboration while capturing …

TS-074441 — Chemical looping gasification and combustion are promising pathways for low‑carbon energy conversion, CO₂ capture, and syngas production, but their commercial deployment is constrained by the performance of available oxygen carrier materials. Existing metal oxide oxygen carriers often suffer f…

TS-071745 — The Need Current two-way shape memory polymers (SMPs) require expensive, crystalline or liquid crystalline monomers and complex synthesis, limiting their use in cost-sensitive and biocompatible applications. Widely used amorphous polymers (e.g., polystyrene, PMMA) are inexpensive and common in con…

TS-071744 — The Need Current inkjet printing technologies are limited by the need for inks with specific viscosity and ejection properties, which restricts the range of printable materials and compromises print resolution due to droplet splashing. There is a significant need for a printing method that enables…

TS-068473 — The Need β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga2O3) on Ga2O3 substrates. Existing …

TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…

TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.

TS-061767 — Current semiconductor materials used in power devices are reaching their performance limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the ability to support next-generation optoelectronic and high-power device applications.

TS-049909 — A control method based upon properties of linear systems to manipulate the vibrational amplitudes and frequencies of structural systems by exploiting piecewise-linear (PWL) nonlinearities.