TS-073810 — Next-generation power electronics demand materials that can support ultra-high breakdown voltages, low leakage currents, and scalable manufacturing. While β-Ga₂O₃ is highly attractive for these applications, device performance has been limited by the lack of high-quality, thick drift layers w…

TS-068473 — The Need β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga2O3) on Ga2O3 substrates. Existing …