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Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
  • Licensing Officer: Randhawa, Davinder

Formation of carbon containing semi-insulating layers in β-Ga2O3 based structures and devices
TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.
The Need β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, challenges exist in the controlled doping of semi-insulating layers of β-Ga2O3, limiting the material’s full potenti…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
  • Licensing Officer: Randhawa, Davinder

A Lightweight Low Inductance Power Module with Insulated Baseplates
TS-048588 — A lightweight power module that reduces loop stray inductance while maintaining good electrical insulation and thermal dissipation.
In conventional power module structures, the die is attached to the substrate, usually direct bonding copper (DBC). The ceramic substrate layer provides electrical insulation between the circuit and cooling structure and attaches to a conductive baseplate material (Cu, Al, AlSiC) to dissipate heat…
  • College: College of Engineering (COE)
  • Inventors: Lyu, Xintong; Wang, Jin
  • Licensing Officer: Ashouripashaki, Mandana

A Model Based Assessment Approach and an Automation Environment for Qualification of Embedded Digital Devices
TS-042856 — A Framework and Automatization process designed to determine the functionality of Embedded Digital Devices.
As our technology becomes increasingly complex, so does the quantity and variation of the Embedded Digital Device [EDD] components that are required within the project. Because not every device is made perfectly to specifications due to a propagation of random error, it is important to have a dive…
  • College: College of Engineering (COE)
  • Inventors: Smidts, Carol; Diao, Xiaoxu; Li, Boyuan
  • Licensing Officer: Hampton, Andrew

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Zinn, Ryan

Methods and Apparatus to estimate phase of radiofrequency field
TS-037437 — A technique for estimating magnetic resonance imaging absolute phase to enhance machine efficiency and versatility.
Estimating absolute phase of Radiofrequency (RF) field including both the transmit field and receive sensitivity is very important for various stages of the magnetic resonance imaging (MRI) procedure. It can be used for mulit-transmit, RF shimming, parallel imaging reconstruction, electric propert…
  • College: College of Arts & Sciences
  • Inventors: Wang, Jinghua; Ding, Yu
  • Licensing Officer: Panic, Ana

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