# of Displayed Technologies: 8 / 8


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High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

Surface barrier engineering using AlGaO/GaO
TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.
Ga2O3 is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop t…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dhara, Sushovan
  • Licensing Officer: Zinn, Ryan

In situ damage free etching of Ga2O3 using Ga flux for fabricating high aspect ratio 3D structures
TS-062975 — With a high theoretical breakdown field strength, β-Ga2O3 has the potential to be useful in power switching and high frequency power amplifying devices. For any device technology to be competitive, damage free etching techniques are necessary. All current dry etching recipes in β-Ga2O3 h…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Fiedler, Andreas; Kalarickal, Nidhin Kurian
  • Licensing Officer: Zinn, Ryan

Dielectric heterojunction device
TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Moore, Wyatt; Xia, Zhanbo
  • Licensing Officer: Zinn, Ryan

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Zinn, Ryan

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Zinn, Ryan

Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Myers, Roberto
  • Licensing Officer: Zinn, Ryan

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