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Method of forming low turn on and high breakdown voltage lateral diode.
TS-050626 — A hybrid Schottky and metal/high K dielectric/semiconductor contact to realize higher breakdown and low turn-on voltage for lateral diode based on wide bandgap semiconductors.
Practical realization of high breakdown fields in wide bandgap semiconductors such as GaN, SiC, typically requires the use of p-n junction, which require a turn-on voltage comparable to the bandgap of these semiconductors. For lower voltage applications, the forward or ON-state power loss due to h…
  • College: College of Engineering (COE)
  • Inventors: Rahman, Mohammad Wahidur "Wahidur"; Rajan, Siddharth
  • Licensing Officer: Hong, Dongsung

Method for selective area doping of Gallium Nitride
TS-050625 — A method of selectively obtaining n- and p-type regions from the same III-Nitride layer deposited on a substrate without using diffusion or ion-implantation techniques.
According to IBIS World Reports, manufacturers of electronic components will likely refocus their production away from silicon-based products to wide bandgap (WBG) semiconductors, which are made of materials that have a wider bandgap than silicon. A bandgap, or energy gap, denotes the energy diffe…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Chandrasekar, Hareesh; Rahman, Mohammad Wahidur "Wahidur"
  • Licensing Officer: Hong, Dongsung

Method for Utilizing Tunnel Junction in the Device Integration of Transistor on Light-Emitting Diode
TS-050233 — This device utilizes a tunnel junction on top of a light-emitting diode (LED) to enable direct integration of a transistor on top of the tunnel junction.
Faster and more efficient ways to communicate are at the forefront of valuable technologies that are being developed. The majority of us are connected to satellites or WiFi for the most part of every day. Li-Fi (short for light fidelity) is wireless communication technology which utilizes light to…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Jamal-Eddine, Zane
  • Licensing Officer: Hong, Dongsung

Dielectric heterojunction device
TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Moore, Wyatt; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Hong, Dongsung

Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Myers, Roberto
  • Licensing Officer: Hong, Dongsung

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