High-K Dielectric barriers to suppress internal photoemission photocurrents

The Need

In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their effectiveness.

The Technology

Introducing our new UN solar-blind photodetector. This innovative device leverages the ultra-wide bandgap material Ga2O3. While Ga2O3 typically suffers from low UV-visible rejection, our photodetector overcomes this challenge by incorporating a layer of high-K dielectric BaTiO3. The result is a photodetector with a UV-visible rejection ratio improved by five orders of magnitude.

Commercial Applications

  • Medical Imaging: Enhanced UV detection capabilities can improve the accuracy and reliability of various imaging techniques.
  • Optical Communications: With improved UV-visible rejection, data transmission can be more efficient and less prone to interference.
  • Defense Systems: Enhanced UV detection can provide better surveillance and threat detection capabilities.


  • Improved UV-Visible Rejection: Our photodetector offers a five orders of magnitude improvement in the UV-visible rejection ratio.
  • Versatility: Suitable for a wide range of applications, from medical imaging to defense systems.
  • Reliability: The use of robust materials like Ga2O3 and BaTiO3 ensures long-term performance and durability.

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