Available Technologies
# of Displayed Technologies: 5 / 5
Applied Category Filter (Click To Remove): MEMS & Nanotechnology
Direct Current Generation By Recycling Omnipresent EM Waves
TS-063309 — The Need
Over five billion wireless devices are connected to wireless service providers worldwide, with a constant emergence of new and improved technologies. Fifth Generation (5G) wireless technologies are rapidly being deployed due to the demand for fast and more reliable services for mobile user…
- College: College of Engineering (COE)
- Inventors: Wang, Xiaoguang; Lyu, Hualiang
- Licensing Officer: Randhawa, Davinder
Substrates for vertical power devices
TS-062951 — The Need
In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
Antimonide based Separate Absorption Charge and Multiplication Avalanche Photodiode
TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise an…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Formation of carbon containing semi-insulating layers in β-Ga2O3 based structures and devices
TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.
The Need
β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, challenges exist in the controlled doping of semi-insulating layers of β-Ga2O3, limiting the material’s full potenti…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
Development of thick β-(AlxGa1-x)2O3 films with low-Al content for vertical power devices
TS-061767 — Current semiconductor materials used in power devices are reaching their performance limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the ability to support next-generation optoelectronic and high-power device applications.
The Need
Currently, β-Ga2O3 is used as the semiconductor material for developing next-generation electronic devices to support various high-power applications ranging from telecommunication to electric vehicles (EVs). Yet, the use of β-Ga2O3 is introducing significant production costs…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
