The Need

Next‑generation power electronics require devices that can operate efficiently under high voltages, high currents, and harsh environments while maintaining fast, reliable switching. Existing electrically gated solutions in wide and ultra‑wide bandgap semiconductors face tradeoffs among robustness, complexity, and scalability, particularly where conventional p‑type control schemes are impractical or unreliable. There is a strong unmet need for alternative, non-contact control mechanisms that enable high‑performance switching without sacrificing material advantages or adding significant system complexity.

The Technology

OSU engineers have developed a novel optically controlled solid‑state device platform based on an ultra‑wide bandgap semiconductor. Instead of relying on conventional electrical gating, the device uses light to modulate charge distributions within engineered layers of the material, reversibly switching conduction on and off. Illumination induces a stable internal charge response that enables current flow through a predefined channel, while darkness restores the off state. The result is a robust, light‑addressable switching architecture suitable for demanding operating conditions.

Commercial Applications

• High‑voltage, high‑power electronic switches
• Optically isolated or remotely triggered power control systems
• Radiation‑hard or extreme‑environment electronics
• Advanced optoelectronic or sensing systems requiring electrical–optical coupling

Benefits/Advantages

• Non‑contact control: Optical triggering eliminates the need for traditional electrical gate structures.
• Compatibility with extreme environments: Well‑suited for high temperature, high field, and harsh operating conditions.
• High power capability: Leverages ultra‑wide bandgap materials for voltage and current handling.
• Design flexibility: Enables new device architectures inaccessible to conventional electrically gated approaches.