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Next-Gen InGaN Quantum Wells for High-Efficiency Amber LEDs
TS-071961 — The Need Despite near-perfect external quantum efficiency in blue InGaN LEDs, devices emitting green, amber, and longer visible wavelengths remain inefficient. This is due to internal electric fields and charge separation in conventional quantum wells, which worsen with higher indium content and wid…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Zhang, Kaitian
  • Licensing Officer: Randhawa, Davinder

GRAFT-Stereo: Cost-Effective, High-Accuracy 3D Depth Perception
TS-071747 — The Need High-accuracy 3D depth perception is critical for autonomous systems, but current stereo camera methods falter in complex outdoor environments. While LiDAR can improve accuracy, its effectiveness plummets when using sparse data from affordable, lower-beam sensors, making high performance …
  • College: College of Engineering (COE)
  • Inventors: Chao, Wei-Lun "Harry"; Asare Boateng, Jeffery; Jeon, Sooyoung; Krishna, Sanjay; Musah, Tawfiq; Yoo, Jinsu
  • Licensing Officer: Randhawa, Davinder

High-Resolution, Low-Cost Beam Profiling for Industrial Lasers
TS-071089 — The Need Industrial high-energy lasers, commonly used in welding, metal additive manufacturing, and cutting, require precise beam profiling to optimize performance and ensure quality. However, current commercial beam profiling systems are prohibitively expensive or incompatible with high-power laser…
  • College: College of Engineering (COE)
  • Inventors: Bafahm Alamdari, Aslan; Chowdhury, Enam; Wolff, Sarah
  • Licensing Officer: Ashouripashaki, Mandana

Scalable Quantum Photonic Processor for High-Fidelity Computing
TS-070302 — The Need Current quantum computing technologies face significant challenges in scalability, error correction, and computational efficiency. There is a critical need for a robust, scalable quantum processor that can perform complex computations with high fidelity and low error rates, enabling advance…
  • College: College of Engineering (COE)
  • Inventors: Arafin, Shamsul; Crisan, Mihai
  • Licensing Officer: Randhawa, Davinder

Open Circuit Voltage Photodetector
TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.
Existing photodetectors are susceptible to various noise sources, such as thermal and electronic. The noise can degrade the signal-to-noise ratio and affect the accuracy of measurements, particularly in low-light conditions. This technology is an open-circuit voltage photodetector (OCVP) that…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Fuller, Earl; Kazemi, Alireza; Khalil, Waleed; Ronningen, TJ; Smith, Dale "Shane"; Specht, Teressa; Tantawy, Ramy "Ramy"
  • Licensing Officer: Zinn, Ryan

Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
  • Licensing Officer: Ashouripashaki, Mandana

High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
  • Licensing Officer: Ashouripashaki, Mandana

3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, TJ; Shu, Qingyuan
  • Licensing Officer: Zinn, Ryan

Substrates for vertical power devices
TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
  • Licensing Officer: Randhawa, Davinder

GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
  • Licensing Officer: Randhawa, Davinder

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