TS-071961 — The Need Despite near-perfect external quantum efficiency in blue InGaN LEDs, devices emitting green, amber, and longer visible wavelengths remain inefficient. This is due to internal electric fields and charge separation in conventional quantum wells, which worsen with higher indium content and wid…

TS-068473 — The Need β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga2O3) on Ga2O3 substrates. Existing …

TS-063961 — The Need In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…

TS-063784 — The Need In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…

TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…

TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…

TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.

TS-061767 — Current semiconductor materials used in power devices are reaching their performance limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the ability to support next-generation optoelectronic and high-power device applications.

TS-050244 — A design of scalable laser-assisted MOCVD chamber for III-nitrides and other semiconductors with a laser array input.

TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.